@article{PrallKaspariBrunneretal.2015,
  author    = {Christoph Prall and Christian Kaspari and Frank Brunner and Kolja Haberland and Markus Weyers and Dirk Rueter},
  title     = {In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures},
  series   = {Journal of Crystal Growth},
  volume    = {415},
  number    = {1},
  doi       = {https://doi.org/10.1016/j.jcrysgro.2014.12.023},
  url       = {https://nbn-resolving.org/urn:nbn:de:hbz:1393-opus4-843},
  pages     = {1 -- 6},
  year      = {2015},
  abstract  = {In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra – even at an early stage of the growth of the active region – can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.},
  language  = {en}
}