TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Prall, Christoph
A1  - Kaspari, Christian
A1  - Brunner, Frank
A1  - Haberland, Kolja
A1  - Weyers, Markus
A1  - Rueter, Dirk
T1  - In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures
JF  - Journal of Crystal Growth
N2  - In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra – even at an early stage of the growth of the active region – can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.
Y1  - 2015
UN  - https://nbn-resolving.org/urn:nbn:de:hbz:1393-opus4-843
U6  - https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.12.023
DO  - https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.12.023
VL  - 415
IS  - 1
SP  - 1
EP  - 6
ER  -