TY  - JOUR
U1  - Zeitschriftenartikel, wissenschaftlich - begutachtet (reviewed)
A1  - Prall, Christoph
A1  - Rübesam, Markus
A1  - Weber, C.
A1  - Reufer, Martin
A1  - Rüter, Dirk
T1  - Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE
JF  - Journal of Crystal Growth
N2  - Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.
Y1  - 2014
UN  - https://nbn-resolving.org/urn:nbn:de:hbz:1393-opus4-862
U6  - https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.04.001
DO  - https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.04.001
VL  - 397
SP  - 24
EP  - 28
ER  -