In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

  • In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra – even at an early stage of the growth of the active region – can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.

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Metadaten
Author:Prall Christoph, Christian Kaspari, F. Brunner, K. Haberland, Weyer M., Dirk Rüter
URN:urn:nbn:de:hbz:1393-opus4-843
DOI:https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.12.023
Parent Title (German):Journal of Crystal Growth
Document Type:Article
Language:German
Year of Completion:2015
Date of first Publication:2019/02/07
Release Date:2019/02/07
Volume:415
Issue:1
First Page:1
Last Page:6
Institutes:Fachbereich 4 - Institut Mess- und Senstortechnik
DDC class:600 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik
Licence (German):License LogoCreative Commons - Namensnennung-Nicht kommerziell-Keine Bearbeitung