Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE

  • Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.

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Metadaten
Author:Christoph Prall, M. Rübesam, C. Weber, Martin Reufer, Dirk Rüter
URN:urn:nbn:de:hbz:1393-opus4-862
DOI:https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.04.001
Parent Title (German):Journal of Crystal Growth
Document Type:Article
Language:German
Year of Completion:2014
Date of first Publication:2019/02/07
Release Date:2019/02/07
Volume:397
First Page:24
Last Page:28
Institutes:Fachbereich 4 - Institut Mess- und Senstortechnik
Fachbereich 4 - Institut Naturwissenschaften
DDC class:500 Naturwissenschaften und Mathematik / 530 Physik
600 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik
Licence (German):License LogoCreative Commons - Namensnennung-Nicht kommerziell-Keine Bearbeitung