In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures
- In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra – even at an early stage of the growth of the active region – can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.
Author: | Christoph Prall, Christian Kaspari, Frank Brunner, Kolja Haberland, Markus Weyers, Dirk Rueter |
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URN: | urn:nbn:de:hbz:1393-opus4-843 |
DOI: | https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.12.023 |
Parent Title (English): | Journal of Crystal Growth |
Document Type: | Article |
Language: | English |
Year of Completion: | 2015 |
Date of first Publication: | 2019/02/07 |
Release Date: | 2019/02/07 |
Volume: | 415 |
Issue: | 1 |
First Page: | 1 |
Last Page: | 6 |
Institutes: | Fachbereich 4 - Institut Mess- und Senstortechnik |
DDC class: | 600 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik |
Licence (German): | Creative Commons - Namensnennung-Nicht kommerziell-Keine Bearbeitung |