Volltext-Downloads (blau) und Frontdoor-Views (grau)

Analysis of the Efficient High-Temperature in Situ Photoluminescence from GaN Layers during Epitaxial Growth

  • Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high temperatures permits a quasi-continuous in situ characterization of opto-electronic properties. Therefore, epitaxial parameters can now be optimized at the earliest possible stage. A pulsed and high-power UV laser was required for PL excitation at high temperatures. Herein, the underlying nonlinear mechanism was studied via time-resolved PL experiments and rate equation-based modeling. A temperature-activated and saturable path for quenching over defects was identified. Beyond the saturation threshold, reasonably-intensive PL sets in. At high temperatures not only is the near band gap-PL present, but also—as a new observation—a defect-assisted PL emerges. Apart from these specific electronic transitions in high-temperature PL of GaN, a simple, but reasonably predictive model of the luminescent thin film has been set up to track down interference fringes in the PL spectra. It is worth mentioning that the spectral PL modulation (aiming at the Purcell effect) is often mixed up with ordinary Fabry–Pérot interference. A distinction has become key to properly analyze the spectral signatures of high-temperature PL in order to provide a reliable in situ characterization of GaN layers during epitaxial growth

Download full text files

Export metadata

Additional Services

Share in Twitter Search Google Scholar


Author:Christoph Prall, Daniel Erni, Dirk Rueter
Parent Title (English):Condensed Matter
Document Type:Article
Year of Completion:2017
Release Date:2019/04/02
First Page:1
Last Page:15
Institutes:Fachbereich 4 - Institut Mess- und Senstortechnik
DDC class:600 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik
Licence (German):License LogoCreative Commons - CC BY - Namensnennung 4.0 International