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Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high temperatures permits a quasi-continuous in situ characterization of opto-electronic properties. Therefore, epitaxial parameters can now be optimized at the earliest possible stage. A pulsed and high-power UV laser was required for PL excitation at high temperatures. Herein, the underlying nonlinear mechanism was studied via time-resolved PL experiments and rate equation-based modeling. A temperature-activated and saturable path for quenching over defects was identified. Beyond the saturation threshold, reasonably-intensive PL sets in. At high temperatures not only is the near band gap-PL present, but also—as a new observation—a defect-assisted PL emerges. Apart from these specific electronic transitions in high-temperature PL of GaN, a simple, but reasonably predictive model of the luminescent thin film has been set up to track down interference fringes in the PL spectra. It is worth mentioning that the spectral PL modulation (aiming at the Purcell effect) is often mixed up with ordinary Fabry–Pérot interference. A distinction has become key to properly analyze the spectral signatures of high-temperature PL in order to provide a reliable in situ characterization of GaN layers during epitaxial growth
Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.
In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra – even at an early stage of the growth of the active region – can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.