Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE
- Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.
Download full text files
Additional Services
Statistics
| Author: | Christoph Prall, Markus Rübesam, C. Weber, Martin Reufer, Dirk Rüter |
|---|---|
| URN: | urn:nbn:de:hbz:1393-opus4-862 |
| DOI: | https://doi.org/https://doi.org/10.1016/j.jcrysgro.2014.04.001 |
| Parent Title (German): | Journal of Crystal Growth |
| Document Type: | Article |
| Language: | German |
| Year of Completion: | 2014 |
| Date of first Publication: | 2019/02/07 |
| Release Date: | 2019/02/07 |
| Volume: | 397 |
| First Page: | 24 |
| Last Page: | 28 |
| Institutes: | Fachbereich 4 - Institut Mess- und Senstortechnik |
| Fachbereich 4 - Institut Naturwissenschaften | |
| DDC class: | 500 Naturwissenschaften und Mathematik / 530 Physik |
| 600 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik | |
| Licence (German): |  Creative Commons - Namensnennung-Nicht kommerziell-Keine Bearbeitung |
