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The transurethral resection (TUR) is a standard technique in urological treatment procedures. Both, monopolar and bipolar electrosurgical systems, are used for TUR. Whereas electrical and physical processes in surgery surroundings are well understood for monopolar systems, there is no sufficient data base for the assessment of the processes with the use of bipolar systems. In this context a multi-electrode measuring system was developed to visualize the spatial potential distribution around bipolar electrosurgical devices as a first step to risk analysis. To simulate the anatomic surroundings of a transurethral surgery a cylinder filled with isotonic saline solution is used as a complexity reduced experimental environment. Investigations about time stability and a qualitative assessment of the experimental set-up show deviations of measured values less than 5%. This is sufficient for further analysis of calculated power loss density distributions based on measured potential distributions. The spatial potential distribution around a bipolar devices is presented by horizontal and vertical sections through the experimental environment.
To analyze the electric field around bipolar resectoscopes, used in urology, in terms of reasons for late complications after a surgical treatment a flexible multielectrode system was developed to measure the 3-D potential distribution. A high spatial resolution is achieved with the least possible individual measurements under the conditions of a quasi-static electric field. A flexible arrangement and positioning of the measuring points in the vertical direction of the experimental environment enable an adjustable spatial resolution and the selection of the region of interest. The existing influence of the multielectrode system on the measuring results is described and a correction method is presented to achieve significant results. Thus, the multielectrode system is usable for a comparative study of bipolar resectoscopes varying in the arrangement of resection and return electrode.
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique for direct in-situ characterization of GaN and InGaN layers during epitaxial growth in a planetary metalorganic vapor phase epitaxy (MOVPE) reactor was reported. The PL signals reveal – at the earliest possible stage – information about current layer thickness, temperature, composition, surface roughness, and self-absorption. Thus, the PL data is valuable for both controlling and optimizing the growth parameters, thereby promising both better devices and a better yield for the LED industry. This technical report describes an extension of this PL technique to close coupled showerhead (CCS) reactors with narrow optical viewports. In contrast to the wide aperture optics in previous investigations, a compact and all-fiber optical probe without voluminous lens optics, filter elements or beam splitters was used.